0000006150 00000 n 0000085163 00000 n This array consists of three nMOSFETs and three pMOSFETs, all of the enhancement type, with the interconnections shown in Fig. 0000085412 00000 n The CD4007UB MOSFET Array: We shall perform our measurements and experiments using the CD4007UB MOSFET Array. 0000006057 00000 n For repeating the above procedure each time, you will need to reset the MOSFET by shorting the gate and the drain leads using meter probe as explained earlier. Practical Mosfet Testing for Audio page 2 out the Drain. {=xsJeMO$*{.5u`k?O]1qI R/Fp c+i_KFUs`SKx9(6;J ] *"x`c =r$h;$` `iIQHU3R'RJ(l[xF}u *n sBod$u&&HB>@065n@e04dg j O rHV$a:5Xg-eS{3A@ 4G&6" H-+'f4H0IL@ G 41) MEMp-^F\72@H$E"k2cA Depending upon the type of materials used in the construction, and the type of operation, the MOSFETs are classified as in the following figure. 0000147622 00000 n We demonstrate that the results of our test procedure reflect most realistically worst-case, end-of-life parameter drifts that occur in typical SiC MOSFET switching applications. MOSFET testing. S!e@4D 9-9BNKN!%Sii^h#App44pPAqp8(88R+* trailer You don't need to know what type of MOSFET you have (N channel, P channel, enhanced or depleted) 2. Test procedure. Darling EE-331 Laboratory Handbook Page E3.3 Procedure 1 Discrete MOSFET gate lead, . Flux: 4 5 x 103 ions/cm2/s to 1 x 10 ions/cm2/s. 0000003352 00000 n ;}eB64uslt?SnGy^+x^(&.Cki(w7vA*>o)8L!U)DP5s0zm,;`G{.n/O\ya*N+ #I^)r9ri%*{A{(P:AWAP!R%C/EGu:4ZzlDu[Xk~3r xy endstream endobj 102 0 obj << /Type /Font /BaseFont /DIOKVS+Arial-BoldMT /Subtype /Type0 /Encoding /Identity-H /DescendantFonts 103 0 R /ToUnicode 101 0 R >> endobj 103 0 obj [ 154 0 R ] endobj 104 0 obj << /Filter /FlateDecode /Length 100 0 R >> stream 0000000016 00000 n 0000004176 00000 n 0000003597 00000 n 0000002063 00000 n $M/UW301g1{F{T'>@ ZF hXmo8+%VHJ The table below shows the surface-incident beam properties as 0000052585 00000 n 0000006340 00000 n HVQO1~_?N"U' !*!41`E:9sBrI9j8~4jQUA}[+\~/eSUsr~W3_6'} %PDF-1.3 % An induction heater consists of an electromagnet and an electronic This manual describes A non-solid electrolyte covers the rough surface of the oxide layer, serving in principle as the second electrode (-) of The test conditions for the SEMIKRON high voltage test are given in the datasheet (typically with the Visol parameter). HV0Wn0fLfW.PKxrIDG9Nw1wEA8h=@-NzBy=,!Fg P? Apply a 10 VPP sine wave at 100 Hz. MOSFET requires a positive voltage across the gate to source to allow a current to . H\j0b"m7`i>hpqje! For the NMOS testing, connect the multimeter's red probe to the MOSFET source and the black probe to the drain. For this, we need two more terminals- Source (S) and Drain (D), and a potential across them to control the ow of electrons. the DMM test leads. Power MOSFETs are also used as diodes and current sources in some applications. 0000011998 00000 n Wlpyf,GQzz$wxg" ZLeyTOR @7)T.%Jr|P;.YZFXaT^5N'l P.,-Vh]QUTbJ{5EMR/C(N0U!-Px&&VW 0000011400 00000 n 2.3 MOSFET Critical Parameters When switch mode operation of the MOSFET is considered, the goal is to switch between the lowest and . )j".I@6-SCVjY@P^$ @>8`@@F0e'i! Take the MOSFET out of the pink antistatic bag, place a very thin layer of heat sink compound on the back of the MOSFET (if available, do not get it on your fingers or clothes as it is hard to remove), and run a #4 nylon knurled-head thumb screw through the MOSFET and heat sink holes. 4$ZG+7K9g$RlMT$,+ n endstream endobj 105 0 obj 586 endobj 106 0 obj << /Filter /FlateDecode /Length 145 0 R >> stream 1) Set the DMM to the . A schematic the gate charge test circuit and its waveform is shown in Figure 8. 0000000622 00000 n Purpose. By this example, various control strategies . HV044rnkW]. 0000000936 00000 n `tTn+$+lu,M%"sdd7!\f$M 2&~uR[j'aZ+AVVLDp2ldFxhMtvD*ffWQUrnE]gS$kX"JiKQF=:FanoTtpaG-bmU^W"l,,"Cc[QvGk}.t` #hxh|6X'|jXM'R~'W/ - endstream endobj 117 0 obj 623 endobj 118 0 obj << /Filter /FlateDecode /Length 117 0 R >> stream 0000021002 00000 n 0000036143 00000 n 0000053076 00000 n 748 0 obj <>/Filter/FlateDecode/ID[<42013091BC71364F5D0CA27D49345D06>]/Index[735 34]/Info 734 0 R/Length 74/Prev 848188/Root 736 0 R/Size 769/Type/XRef/W[1 2 1]>>stream For motor voltages below 15-volts use a use MOSFETs: IRF4905 for the p-channel and an IRFZ44N for the n-channel. 0000008797 00000 n Testing Methods of MOSFET. 0000085641 00000 n Fabrication and Testing of Dual Gate p-channel MOSFETs by Justin Lavaughn Easley Submitted to the Department of Physics MASSACHUS 7S LNS TE OF TECHNOLOGY SEP 0 4 2013 . 0000084363 00000 n DUT stands for Device Under Test. &NhF/{\Y61Gta'eeyS\Wq]8a~$/{p:oRe?CJ'1/AOWa2I8Z_E%6Lla/3T'iA+uImDd5UcUkO)=L&k5RY0q&|aOllJW `fml2l'_K/ML#nbOd`D3,RqaIOE>;-a-%-(*mlyH/vprCvG;|*}>)gQL FSQE iYupp<8dGd`_|bGUJYc0l4-pqgn8k .10?.^ w/RuP?5Ix^M{! kHh)k \`#`RLQWC/ls&Le702*fa 2. In very short channel devices, part of the depletion is accomplished by the drain and source bias RCA Clean: This is a standard pre-diffusion cleaning procedure, designed to remove thin native oxide, as well organic and ionic contaminants. This topic compliments the discourse on the on-state current presented in the previous chapter. H\@F>E-ZuoUd1?Lfh%#LTYxB`P;v6I]u95m=kwhInMTRtpoO]\tvyY1&C[&3EaxJZ^Ikoz:ot?}4v,UWk_Vq(sLf"myPOr?wYfb&rh Chm)-CvYYr8 0000007120 00000 n 0000110795 00000 n 0000035892 00000 n 0000000567 00000 n 0000003530 00000 n The input resistance of BJT is low. Test Facility Facility: Texas A&M University Cyclotron Single Event Effects Test Facility, 15 MeV/amu tune. 0000007808 00000 n 0000002381 00000 n DMM test leads. Invert Channel A1 by pressing the A1 button in the analog section and select Invert On. 0000035726 00000 n 1. 0000013096 00000 n p6`@$! HGnlhy1q*2zoV(&d(lm:$iENdY;BDs=FDDAMnC)CD~64p|"lce#!4W$L$!Y`fbT$yfCd1b. iJiIk;5](R&U:yn7nlCGe~+7/67CD1wqG|p%XW.#`PcVL BATo=:H8nWmW[GgsBuu5yMQKg{674 *62b? vVQ %e. 0000001252 00000 n SEE Test Method and Guidelines: 2014. 0000005598 00000 n set up a current. 0000011897 00000 n 0000001117 00000 n 0000010724 00000 n 0000004096 00000 n Hb```f``,[@9 | 2*Lji,n7!J=n2% Mq4L7&zl9)a8-H3%B&&Y:Bt q8tI- 0DJJ@a81J`F 0d`^Xl7'*Xn/f 0 H endstream endobj 73 0 obj 232 endobj 65 0 obj << /Type /Page /Parent 59 0 R /Resources 66 0 R /Contents 68 0 R /Rotate 90 /MediaBox [ 0 0 612 792 ] /CropBox [ 37 37 574 754 ] >> endobj 66 0 obj << /ProcSet [ /PDF /Text ] /Font << /TT2 70 0 R >> /ExtGState << /GS1 71 0 R >> /ColorSpace << /Cs5 67 0 R >> >> endobj 67 0 obj [ /CalRGB << /WhitePoint [ 0.9505 1 1.089 ] /Gamma [ 2.22221 2.22221 2.22221 ] /Matrix [ 0.4124 0.2126 0.0193 0.3576 0.71519 0.1192 0.1805 0.0722 0.9505 ] >> ] endobj 68 0 obj << /Length 277 /Filter /FlateDecode >> stream ][\|-'7DWQccnNnnrsubv UKaM`[Lj4$U3-M*@7XVy^k 0000052561 00000 n Ruggedness Testing hbbd``b`6@ HVX@;\ V0lktL@\Fx` B! 0000001948 00000 n 0000008099 00000 n The focus of this project was to determine the optimal gate region wet etch time, using the trench method, for the metal-oxide . 0000134700 00000 n 0000000960 00000 n MOSFET Basics Power MOSFETs are like most MOS transistors in operation and terminology [Taur01, Mohan03]. PDF | On Jan 1, 2010, G. Black and others published Performance Testing of a MOSFET Sensor | Find, read and cite all the research you need on ResearchGate 0000085390 00000 n 0000020569 00000 n 0000004100 00000 n 1 MOSFET Device Physics and Operation 1.1 INTRODUCTION A eld effect transistor (FET) operates as a conducting semiconductor channel with two ohmic contacts - the source and the drain - where the number of charge carriers in the channel is controlled by a third contact - the gate.In the vertical direction, the gate- Figure 1.1.a shows the power Measurement-1 The gate lead of a MOSFET is separated from the other leads by the gate oxide layer which forms the gate of a MOS capacitor. 1qqFc-JFtqFEVY1IESuicW0W 0000053100 00000 n Build the curve-tracer circuit. Insert the MOSFET pins into the green plug and push of the power MOSFET once the gate drive current is known. Experimental Procedure: The trench method consisted of four photolithography stages: isolation, gate region definition, gate metal deposition, and m13E/a{?F['2.DkSo iZq reference to bipolar transistor s, and the procedure to follow in the case of MOSFETs is not immediately obvious. 0000006729 00000 n 0000003382 00000 n While in this mode, the multimeter should indicate a reading between 0.4 V to 0.9 V. 6C ) ESA-ESCC-22900: Total Dose Steady-state Irradiation Test Method. 0000005131 00000 n 0000008065 00000 n This testing procedure is for use with a digital multimeter in the diode test-range with a minimum of 3.3 volt over d.u.t. HVI0w5EwzD$v8Q2w~=N8 "MTBq%0NcZY1~fJJq9 94pQjR824V5f6=;KHwg4O.yQh7lzi;5h8L~DZ1nH2 2ZN GaJ+/n uur+u Dn8C!Kln]J(a%5PQ NiB`TbGAKiWtt{KJ en Change Language. 0000008667 00000 n 50 0 obj<>stream fox racing ranger pant 34 black. HV +XfJ{SNiy4`G#vuUun(7c`|uvLP~7 &[6V7f{/4/T|}90/Qrv9^^.W#G~n5\_!0 the Device Under Test (DUT) can be controlled and measured over the full range of operating conditions. Typical applications are a switching mode or amplification mode. 0000001463 00000 n Figure 1: Initial and final stages of the MOSFET fabrication process. 0000110563 00000 n 0000007377 00000 n Abstract: We present a new, pulsed-gate stress test approach to determine electrical parameter stability of SiC MOSFETs over a lifetime. In this method again there are following three ways to check a faulty MOSFET -. 4) EE 43/100 MOSFET 3 IV. %PDF-1.5 % 0000005576 00000 n Mosfet Testing - Free download as PDF File (.pdf), Text File (.txt) or read online for free. w=)C Measuring V G_op For measuring V G_op of a lateral MOSFET, you will connect drain to gate, so as to forward bias the gate with the same potential as is on the drain. 0000052890 00000 n xref For P-channel devices, use the same procedure, but with reversed polarities. 0000008542 00000 n z{=ttag03]hEYOOOJ>>=}*}T~_O)~?/S~_obh:;DUg>7Tui9pJ}se]o[7+ .9P endstream endobj 111 0 obj << /Type /Font /BaseFont /VMOJNI+GaramondMT /Subtype /Type0 /Encoding /Identity-H /DescendantFonts 107 0 R /ToUnicode 110 0 R >> endobj 112 0 obj << /Filter /FlateDecode /Length 105 0 R >> stream The objective of this procedure will be to determine as much information as possible about an "unknown" MOSFET, using only simple DMM measurements. 0000036122 00000 n Here's how to do it. In this application note, we will review the failure mechanisms and test methodspast and propose a new VSWR ruggedness test method. VSWR testing, but it also requires a repeatable method for testing. Georgia Tech ECE 3040 - Dr. Alan Doolittle Flow of current from "Source" to "Drain" is controlled by the "Gate" voltage. 0000010427 00000 n The wafers should be placed in . 0000002403 00000 n trailer << /Size 74 /Info 62 0 R /Root 64 0 R /Prev 243837 /ID[] >> startxref 0 %%EOF 64 0 obj << /Type /Catalog /Pages 60 0 R >> endobj 72 0 obj << /S 262 /Filter /FlateDecode /Length 73 0 R >> stream How to Check P-Channel Mosfets. English (selected) . 1) By using a measuring meter - In this method, the MOSFET is checked by using a multimeter or Ohmmeter. 19 0 obj <> endobj BJT is a current-controlled device. There are two common methods of testing a MOSFET -. 0000053680 00000 n In this circuit a constant gate current 4.1 Calibration. 0000084911 00000 n -E?@81Ld8BcHCW{fYan]k8R~;NY]fwV".su?cf(u(D]N{w\*W6~u|v8vU,/ 0000053702 00000 n LIST OF TABLE CAPTIONS Table 1 -- Wiring of a MOSFET amplifier circuit. { 0000001204 00000 n <]>> 0000004645 00000 n This parameter is also weakly dependent of the drain current, the supply voltage, and the temperature. Close suggestions Search Search. QiN&E:DFbO(g9 ^$A3F(uZ+v uHj!\%61&9=*)[{FR:47+Ln-1tu[r{P2@>;3o&r+) endstream endobj 115 0 obj 641 endobj 116 0 obj << /Filter /FlateDecode /Length 115 0 R >> stream One overarching topic introduced in this chapter is the off-state current or the leakage current of the MOSFETs. The objective of this procedure will be to determine as much information as possible about an "unknown" MOSFET, using only simple DMM measurements. The objective of this procedure will be to determine as much information as possible about an "unknown" MOSFET, using only simple DMM measurements. 0000010702 00000 n VG ID Vin VD Table 4 -- List of Required Components H\j0b"m7`i>hpqje! (diode-under-test) Connect the 'Source' of the MosFet to the meter's negative (-) lead. MOSFET might continue to meet this expectation is the subject of this chapter. evolution of information system mba notes. :dQ=Dl3}=. This application note describes methods for measuring Power MOSFET characteristics, both with a curve tracer and with special-purpose test circuits . 0000002537 00000 n endstream endobj 69 0 obj << /Type /FontDescriptor /Ascent 891 /CapHeight 0 /Descent -216 /Flags 34 /FontBBox [ -568 -307 2028 1007 ] /FontName /TimesNewRomanPSMT /ItalicAngle 0 /StemV 0 >> endobj 70 0 obj << /Type /Font /Subtype /TrueType /FirstChar 32 /LastChar 150 /Widths [ 250 0 0 0 0 0 0 0 333 333 500 564 250 333 250 278 500 500 500 500 500 500 500 500 500 500 0 0 564 564 564 0 0 722 667 667 722 611 556 0 0 333 389 0 611 889 722 722 556 722 667 556 611 0 722 944 0 0 0 0 0 0 0 0 0 444 500 444 500 444 333 500 500 278 278 500 278 778 500 500 500 500 333 389 278 500 500 722 500 500 444 0 0 0 0 350 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 500 ] /Encoding /WinAnsiEncoding /BaseFont /TimesNewRomanPSMT /FontDescriptor 69 0 R >> endobj 71 0 obj << /Type /ExtGState /SA false /SM 0.02 /TR /Identity >> endobj 1 0 obj << /Type /Page /Parent 59 0 R /Resources 2 0 R /Contents 3 0 R /Rotate 90 /MediaBox [ 0 0 612 792 ] /CropBox [ 37 37 574 754 ] >> endobj 2 0 obj << /ProcSet [ /PDF /Text ] /Font << /TT2 70 0 R /TT4 49 0 R >> /ExtGState << /GS1 71 0 R >> /ColorSpace << /Cs5 67 0 R >> >> endobj 3 0 obj << /Length 908 /Filter /FlateDecode >> stream The N-channel MOSFETs are simply called as NMOS. 0000134106 00000 n 2010: Presented by JeanMarie Lauenstein at the Hardened Electronics and Radiation Technology (HEART) 2015 Conference, Chantilly, VA, -April 21 24, 2015 7 (Prompt . For P-channel the testing steps will be as per 1,2,3,4 and 5, but the polarities of the meter will change. 0000004489 00000 n x[r7}Wqf+l3eKH'MQ"S{Pdm$4} g?\z5=;LEqBC;fFs' You don't need to know the pin out of the device you're testing. 0000003922 00000 n 0000001432 00000 n 0000011378 00000 n endstream endobj 736 0 obj <> endobj 737 0 obj <> endobj 738 0 obj <>stream endobj startxref 0 %%EOF 53 0 obj <> endobj 54 0 obj <> endobj 55 0 obj <> endobj 56 0 obj <> endobj 57 0 obj <>/ExtGState<>/Font<>>> endobj 58 0 obj <> endobj 59 0 obj <> endobj 60 0 obj <> endobj 61 0 obj <> endobj 62 0 obj <> endobj 63 0 obj <> endobj 64 0 obj <> endobj 65 0 obj <> endobj 66 0 obj <> endobj 67 0 obj <> endobj 68 0 obj <> endobj 69 0 obj <> stream Scribd is the world's largest social reading and publishing site. +EuuX7O?tH$*[5B=u,n&xx H\j0$ BV`?l 3hyK(CuaaTK)b':&J3(~~o^z:&&73{ ?4YXi~k7~X;ZbY.j4N2b*"S;xdI=1rP 4. 0000053179 00000 n The MOSFET sensors under test are commercially available devices, designed for installation in vehicles and hydrogen fueling stations. close menu Language. stream Open navigation menu. TM 1019: Ionizing radiation (total dose) test procedure. endstream The input resistance of MOSFET is high. For DC, this capacitor 1. =(_0|MJ F}.Hp)[f@u[C|5WR C?qBgra%!u)8F!Qi1 {}iCSb"rw>dj#T~A[ Mwi/4:#J 91 0 obj << /Linearized 1 /O 93 /H [ 2063 340 ] /L 511494 /E 148180 /N 11 /T 509556 >> endobj xref 91 80 0000000016 00000 n endstream endobj 20 0 obj<> endobj 21 0 obj<> endobj 22 0 obj<>/ColorSpace<>/Font<>/ProcSet[/PDF/Text/ImageB]/ExtGState<>>> endobj 23 0 obj<> endobj 24 0 obj<> endobj 25 0 obj<> endobj 26 0 obj<> endobj 27 0 obj<> endobj 28 0 obj<> endobj 29 0 obj<> endobj 30 0 obj<> endobj 31 0 obj<> endobj 32 0 obj<>stream 0 @ j): endstream endobj 170 0 obj 232 endobj 93 0 obj << /Type /Page /MediaBox [ 0 0 612 792 ] /Parent 89 0 R /BleedBox [ 0 0 612 792 ] /TrimBox [ 0 0 612 792 ] /CropBox [ 0 0 612 792 ] /ArtBox [ 0 0 612 792 ] /Contents [ 104 0 R 112 0 R 114 0 R 116 0 R 118 0 R 120 0 R 122 0 R 164 0 R ] /Resources << /Font << /C2_0 99 0 R /C2_1 97 0 R /C2_2 102 0 R /C2_3 109 0 R /C2_4 111 0 R >> /XObject << /Im0 166 0 R >> /ExtGState << /GS0 167 0 R /GS1 168 0 R >> /ProcSet [ /PDF /Text /ImageB ] >> /Rotate 0 >> endobj 94 0 obj [ 131 0 R ] endobj 95 0 obj << /Filter /FlateDecode /Length 139 0 R >> stream Here the DUT, which is a SiC MOSFET, device 2 the lower left device in the "H" bridge, is instrumented so that the source current, drain to @BC+(@9r~9~?Si)rZr 0000002880 00000 n Use RM = 1k. 0000002601 00000 n 0000009263 00000 n 0000003845 00000 n Ion species: Ag, Xe, and Au. 0000009988 00000 n MOSFETs because they usually have higher threshold voltages. HdSMo0WhjjlQ5HrQb8B=>>?Q[- 0000006119 00000 n 0000011561 00000 n N2&OKFN%M$IX0$aI% |V4iY^T1,O6WL|mFw !.E }4N"Z~? 0000085973 00000 n MOSFET testing. %PDF-1.5 % 51 0 obj << /Linearized 1.0 /L 233944 /H [ 30429 365 ] /O 56 /E 30428 /N 9 /T 233630 /P 0 >> endobj 52 0 obj <<37393F5B4855530AD3D8F8C1985205E9>]/Size 83/Type/XRef/W[0 2 0]/Index[51 32]/Length 64>> 0000134130 00000 n 0000111050 00000 n 2014: ESA-ESCC-25100. 0000084933 00000 n This testing procedure is for use with a digital multimeter in the diode test-range with a minimum of 3.3 volt over d.u.t. Some call this "diode mode". 0000007786 00000 n startxref H\j0~ hb```f``gd` ,`pQA@ASXC"Ay+xz,'Yy!yV0II2qkzN@2B:B$Bv>TD(~JXlYrr L@Hv0t ) 0gdrB sn}@ It can produce output voltage gain in phase with the input. 7.1 Technology ScalingSmall is Beautiful The input impedance is the inverse of the transconductance of the Mosfet, and the output impedance is the value of the Drain resistor. v. endstream endobj startxref $A9 q$@{@f9R0`a%=))))a&a"..2.R[+Ioow}\_Avo8Kzr`^e;Y_+ endstream endobj 96 0 obj [ 126 0 R ] endobj 97 0 obj << /Type /Font /BaseFont /BPTDTW+ArialMT /Subtype /Type0 /Encoding /Identity-H /DescendantFonts 96 0 R /ToUnicode 98 0 R >> endobj 98 0 obj << /Filter /FlateDecode /Length 128 0 R >> stream 0000001974 00000 n T082112_BUY25CS54A 4 III. 735 0 obj <> endobj Used in high current applications. K factor must be determined according to the procedure outlined in 3., except as noted in 3.1 . It depends only on the device parasitic capacitances. MOSFET is a voltage-controlled device. Measurement-1 The gate lead of a MOSFET is separated from the other leads by the gate oxide layer which forms the gate of a MOS capacitor. 0000085994 00000 n xb```e``"711 P C5$cK'[}JHWSXFGHho1,+ExY:405fy pWcvbDCi",:l]G_TT(dP`(;d-[,i@ I-I 0000008520 00000 n 0000004074 00000 n For DC, this capacitor 0000035363 00000 n %%EOF 0000002910 00000 n Experiment-3 R. B. 0000052912 00000 n Limitations of Scaled MOSFET Effect of Reducing Channel Length: Drain Induced Barrier Lowering (DIBL) In devices with long channel lengths, the gate is completely responsible for depleting the semiconductor (QB). The symbols for N-channel MOSFET are as given below. 0000006966 00000 n 0000004676 00000 n 0000021438 00000 n HTMo8W(/2>A 0zH{pmMF[84Rx0,||Y[0dY%U$*Z6MAd&Ym}r9Y*^pSa1v9E"3J,4To#\D2]x'/cG|+;6j0&-bS))nC&YRHe?^N"p~w^]*VSq%?ex)="E$rgWV_s&Il=IWD)3?h k iP%D=. Relevant specifications given by the manufacturer are as follows: Table 1: Technical specifications of MOSFET sensor. First, ensure that the multimeter is in diode mode. 1.1. Measurement-1 The gate lead of a MOSFET is separated from the other leads by the gate oxide layer which forms the gate of a MOS capacitor. 3. 0000052811 00000 n TsO*=l=aC: %3@=ELLp"m ?~c"w'i,J*A'4VB+MKJg'%T=?EPwGn1]6_YhANN^E8'T/Ig(8+v1O%/\EAy\D { endstream endobj 113 0 obj 632 endobj 114 0 obj << /Filter /FlateDecode /Length 113 0 R >> stream 0000009829 00000 n In this connection, the body diode is in forwarding bias mode. 0000011976 00000 n Table 2 -- Apparatus Needed for Testing Table 3 -- Testing Sequence for MOSFET amplifier, for gate voltage, , and drain current, , when =5V and =5V. Accuracy r 3000 ppm Measuring range 0 4.4% H2 in air Operating temperature -40 110C 63 0 obj << /Linearized 1 /O 65 /H [ 622 338 ] /L 245225 /E 2769 /N 17 /T 243847 >> endobj xref 63 11 0000000016 00000 n 0000134027 00000 n 3) (Eq. 0000001660 00000 n They have a high voltage drop (Vce ~2V) and are better used for higher voltage switching.

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